Toward Scalable Manufacturing of Doped Silicon Nanopillars for Thermoelectrics via Metal-Assisted Chemical Etching - Data

Published: 5 August 2025| Version 1 | DOI: 10.17632/bk82wc727y.1
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Description

These data are part of a systematic study on the localized and non-localized etch rates of silicon nanopillars produced using Metal-Assisted Chemical Etching (MACE) for thermoelectric applications. Specifically, they represent a collection of etch rates as a function of doping level for both p-type and n-type silicon, using both 1-pot and 2-pot MACE processes. Data are available in both .csv and .xlsx format.

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Institutions

University of Milano-Bicocca

Departments

Department of Materials Science

Categories

Thermoelectrics, Silicon, Nanowire, Advanced Material

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