High-crystallinity In-Rich InGaN nanotowers grown on Si(111) via MBE as a platform for biosensing applications

Name: High-crystallinity In-Rich InGaN nanotowers grown on Si(111) via MBE as a platform for biosensing applications
Creator: Oksana Koplak
Published: 2025-06-17T14:55:04.760Z
Keywords: Scanning Electron Microscopy, X-Ray Diffraction, Transmission Electron Microscopy

Koplak, Oksana; Canciani, Matteo; Vichi, Stefano; Kulesh, Nikita; Chrastina, Daniel; Noetzel, Richard; Sanguinetti, Stefano

doi:10.17632/hjy2rw6ss4.1

High-crystallinity In-Rich InGaN nanotowers grown on Si(111) via MBE as a platform for biosensing applications

Published: 17 June 2025| Version 1 | DOI: 10.17632/hjy2rw6ss4.1

Contributors:

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Description

This dataset provides the structural and electrochemical properties of 3D InGaN nanotowers (NTs) grown on p-Si(111) substrates.

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Institutions

University of Milano-Bicocca

Departments

Department of Materials Science

Additional Metadata for University of Milano - Bicocca

Language	English
Date the data was collected	2025-06-04T22:00:00.000Z
ERC Keywords	PE3_5 Physical properties of semiconductors and insulators
SSD Classification	FIS/03 - FISICA DELLA MATERIA
Geolocation	Italy

High-crystallinity In-Rich InGaN nanotowers grown on Si(111) via MBE as a platform for biosensing applications

Description

Files

Institutions

Departments

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Additional Metadata for University of Milano - Bicocca

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